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SSC80A2GT8 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch Portable Devices DCDC conversion Pin Configuration Top View Package Information U

Key Features

  • s.
  • VDS VGS 100V ±20V RDSon TYP 80mR@10V 135mR@4V5 ID 6A.
  • General.

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Datasheet Details

Part number SSC80A2GT8
Manufacturer AFSEMI
File Size 110.71 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC80A2GT8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC80A2GT8 N-Channel Enhancement Mode MOSFET  Features  VDS VGS 100V ±20V RDSon TYP 80mR@10V 135mR@4V5 ID 6A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin Configuration Top View  Package Information Units:mm SSC-V1.0 http://www.afsemi.