SSC8160GS6 - N-Channel Enhancement Mode MOSFET

General Description

threshold voltage (2V), it is ideal for portable equipment.

Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,

Key Features

s.
VDS 60V VGS ±20V RDSon TYP 2R@10V 3R@4V5 ID 300mA ESD 3kV.
General.

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SSC8160GS6 n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8160GS6
Manufacturer	AFSEMI
File Size	187.91 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8160GS6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8160GS6 N-channel Small Switching MOSFET  Features  VDS 60V VGS ±20V RDSon TYP 2R@10V 3R@4V5 ID 300mA ESD 3kV   General Description This device is an N-Channel enhancement mode MOSFET, with low on-resistance, fast switching speed and low threshold voltage (2V), it is ideal for portable equipment. Applications  Direct Logic-Level Interface: TTL/CMOS  Drivers: Relays, Solenoids, Lamps, Hammers,  Display, Memories, Transistors, etc.  Battery Operated Systems  Solid-State Relays Pin configuration Top View D 3  Package Information 12 GS ③ ①② SOT23 Unit:mm SSC-V1.0 http://www.afsemi.