SSC8160GS6 Datasheet, AFSEMI

* VDS 60V VGS ±20V RDSon TYP 2R@10V 3R@4V5 ID 300mA ESD 3kV
*
* General Description This device is an N-Channel enhancement mode MOSFET, with low on-r.

* Direct Logic-Level Interface: TTL/CMOS
* Drivers: Relays, Solenoids, Lamps, Hammers,
* Display, Memories, .

This device is an N-Channel enhancement mode MOSFET, with low on-resistance, fast switching speed and low threshold voltage (2V), it is ideal for portable equipment. Applications
* Direct Logic-Level Interface: TTL/CMOS
* Drivers: Relays, So.