SSC8162GT3
SSC8162GT3 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS 60V
VGS ±20V
RDSon TYP 9m R@10V 13m R@4V5
ID 60A
- - General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
- Load Switch
- Portable Devices
- DCDC conversion
Pin Configuration
Top View
- Package Information
SSC-V1.0 http://.afsemi.
1/5
Analog Future
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current (Note 1)
Plused Drain Current (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
TJ, TSTG
N-channel 60 ±20 60 240 32
-55 to +150
Unit V V A A W °C
- Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter Drain- Source Breakdown Voltage...
