900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






AFSEMI

SSC8164GS6 Datasheet Preview

SSC8164GS6 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SSC8164GS6
N-channel Small Switching MOSFET
Features
Applications
VDS
60V
VGS
±20V
RDSon TYP
1.1R@10V
1.5R@4V5
ID
400mA
ESD
500V
Load Switch
Portable Devices
DCDC Conversion
Pin Configuration
General Description
Top View
D
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and
3
DMOS trench technology .This device particularly suits low
voltage applications, especially for battery powered circuits,
the tiny and thin outline saves PCB consumption.
12
Ordering Information
GS
Device
SSC8164GS6
Marking
8164
Package
SOT23
Qty per Reel
3000
Reel Size
7 Inch
SSC-V1.0
http://www.afsemi.com
1/6
Analog Future




AFSEMI

SSC8164GS6 Datasheet Preview

SSC8164GS6 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SSC8164GS6
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Drain-source voltage
VDSS
60
Gate-source voltage
VGSS
±20
Drain current
- Continuous
- Pulse
Total power dissipation (Tc=25°C)
ID 0.4
IDM 0.8
PD 0.45
Channel temperature
TCH -55 ~ +150
Storage temperature
TSTG
-55 ~ +150
Unit
V
V
A
W
°C
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate-Source Leakage Current
V(BR)DSS
IDSS
IGSS
VGS = 0V, ID =10uA
VDS = 60 V , VGS = 0V
VGS =±15 V , VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH )
VDS = VGS, ID = 250uA
ID = 500mA , VGS =10V
Drain-Source On-state Resistance
RDS(ON)
ID = 500mA , VGS = 4.5V
Body Diode Forward Voltage
ID = 500mA , VGS = 2.5V
VSD IS = 200 mA, VGS = 0 V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Feedback Capacitance
CISS
COSS
CRSS
VDS = 25V , VGS = 0V
f= 1 MHz
SWITCHING CHARACTERISTICS
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
TD ( ON )
TR
TD( OFF )
TF
VGS = 5V , ID = 10mA
VDS = 5V, RL = 500R,
RGS = 10R
Min
60
--
--
0.75
--
--
1.25
--
--
--
--
--
--
--
Typ Max Unit
-- -- V
-- 1 uA
-- ±10 uA
1 1.25
1.1 2.5
1.5 3.5
1.7 4
1.3
V
R
V
30 --
12 -- pF
9 --
12 --
10 --
ns
35 --
15 --
SSC-V1.0
http://www.afsemi.com
2/6
Analog Future


Part Number SSC8164GS6
Description N-Channel Enhancement Mode MOSFET
Maker AFSEMI
Total Page 6 Pages
PDF Download

SSC8164GS6 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SSC8164GS6 N-Channel Enhancement Mode MOSFET
AFSEMI





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy