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SSC8164GS6 - N-Channel Enhancement Mode MOSFET

General Description

the tiny and thin outline saves PCB consumption.

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Key Features

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Datasheet Details

Part number SSC8164GS6
Manufacturer AFSEMI
File Size 389.84 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8164GS6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8164GS6 N-channel Small Switching MOSFET  Features  Applications VDS 60V VGS ±20V RDSon TYP 1.1R@10V 1.5R@4V5 ID 400mA ESD 500V  Load Switch  Portable Devices  DCDC Conversion  Pin Configuration  General Description Top View D This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and 3 DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. 12  Ordering Information GS Device SSC8164GS6 Marking 8164 Package SOT23 Qty per Reel 3000 Reel Size 7 Inch SSC-V1.0 http://www.afsemi.