SSC8326GS1V1.0 mosfet equivalent, dual n-channel enhancement mode mosfet.
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VDS VGS 20V ±12V
RDSon TYP 20mR@4V5 22mR@3V8 24mR@2V5
ID 6A
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* General Description
This device combines 2 N-channel enhancement mode MOSFETs,which us.
* Package Information
Applications
* Li-ion battery;
* Load swich;
* Battery charger Pin configuration.
This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM .
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