SSC8326GS1V1.0 Description
This device bines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Package Information Applications Li-ion battery;.
SSC8326GS1V1.0 Key Features
- General Description