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SSC8326GS1V1.0 Datasheet - AFSEMI

Dual N-Channel Enhancement Mode MOSFET

SSC8326GS1V1.0 General Description

This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. * Package Information Applicati.

SSC8326GS1V1.0 Datasheet (227.59 KB)

Preview of SSC8326GS1V1.0 PDF

Datasheet Details

Part number:

SSC8326GS1V1.0

Manufacturer:

AFSEMI

File Size:

227.59 KB

Description:

Dual n-channel enhancement mode mosfet.

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SSC8326GS1V1.0 Dual N-Channel Enhancement Mode MOSFET AFSEMI

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