Datasheet Details
| Part number | SSC8330GQ4 | 
|---|---|
| Manufacturer | AFSEMI | 
| File Size | 1.62 MB | 
| Description | Dual N-Channel Enhancement Mode MOSFET | 
| Datasheet | 
        
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| Part number | SSC8330GQ4 | 
|---|---|
| Manufacturer | AFSEMI | 
| File Size | 1.62 MB | 
| Description | Dual N-Channel Enhancement Mode MOSFET | 
| Datasheet | 
        
           | 
    
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch or in PWM applications. Package Information SSC-1V0 Package: DFN3X3-8L http://www.afsemi.com 1 / 11 Analog Future SSC8330GQ4 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 VGS@10V TC = 25°C Continuous Drain Current 1 VGS@10V TC = 1
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