The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSC8333GS1
Dual P-Channel Enhancement Mode MOSFET
Features
Applications
TFT panel power switch;
VDS -30V
VGS ±20V
RDSon TYP 61mR@-10V 77mR@-4V5
ID -4.5A
High Side DC/DC Converter High Side Driver for Brushless DC Motor
Portable DVD, DPF Pin configuration
General Description
Top View
D1 D1 D2 D2
This device combines 2 P-Channel enhancement mode
power FETs which are produced with high cell density,
DMOS trench technology, which is especially used to
minimize on-state resistance. This device is particularly
suited for low voltage application such as portable
S1 G1 S2 G2
equipment, power management and other battery
powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
SSC8333GS1 Datasheet
