Datasheet Details
| Part number | SSC8333GS1 |
|---|---|
| Manufacturer | AFSEMI |
| File Size | 198.67 KB |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Datasheet |
 SSC8333GS1-AFSEMI.pdf
|
| Part number | SSC8333GS1 |
|---|---|
| Manufacturer | AFSEMI |
| File Size | 198.67 KB |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Datasheet |
SSC8333GS1-AFSEMI.pdf
|
Top View D1 D1 D2 D2 This device combines 2 P-Channel enhancement mode power FETs which are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.This device is particularly suited for low voltage application such as portable S1 G1 S2 G2 equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Package Information ⑧ ⑦ ⑥⑤ ①② ③ ④
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