SSC8339GS1 - Dual P-Channel Enhancement Mode MOSFET

General Description

on-state resistance.

Key Features

s VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A.

SSC8339GS1 dual p-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8339GS1
Manufacturer	AFSEMI
File Size	320.12 KB
Description	Dual P-Channel Enhancement Mode MOSFET
Datasheet	SSC8339GS1 Datasheet

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Full PDF Text Transcription (Reference)

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SSC8339GS1 Dual P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Top View D1 D1 D2 D2 This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch S1 G1 S2 G2 and battery protection.  Package Information ⑧ ⑦ ⑥⑤ ①② ③ ④ SSC-1V0 SOP8 Unit:mm http://www.afsemi.