SSC8339GS1 Description
Top View D1 D1 D2 D2 This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch S1 G1 S2 G2 and battery protection. Package Information ⑧ ⑦ ⑥⑤ ①② ③ ④ SSC-1V0 SOP8 Unit:mm http://.afsemi.