SSC8339GS1 mosfet equivalent, dual p-channel enhancement mode mosfet.
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -10A
* Applications
* Load Switch
* DCDC conversion
* NB battery
* Pin configuration
* Ge.
* Load Switch
* DCDC conversion
* NB battery
* Pin configuration
* General Description
Top View
D1.
Top View
D1 D1 D2 D2
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of.
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