Datasheet Details
| Part number | SSC8362GS1 |
|---|---|
| Manufacturer | AFSEMI |
| File Size | 235.89 KB |
| Description | Dual N-Channel Enhancement Mode MOSFET |
| Datasheet |
 SSC8362GS1 Datasheet
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General Description
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems.
Key Features
- s VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6.5A.
- General.