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SSC8362GS1 - Dual N-Channel Enhancement Mode MOSFET

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Datasheet Details

Part number SSC8362GS1
Manufacturer AFSEMI
File Size 235.89 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8362GS1-AFSEMI.pdf

SSC8362GS1 Product details

Description

This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. Package Information Applications Inverter; Pin configuration Top View ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8362GS1 Absol

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