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AFSEMI

SSC8K21GN3 Datasheet Preview

SSC8K21GN3 Datasheet

P-Channel Enhancement Mode MOSFET

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SSC8K21GN3
P-Channel Enhancement Mode MOSFET with Schottky Diode
Features
P-MOSFET
VDS VGS
-20V ±8V
Schottky
VR IR
20V 35uA
RDSon TYP
130mR@-4V5
170mR@-2V5
230mR@-1V8
VF TYP
410Mv@0.5A
ID
-2A
IO
1A
Applications
Li Battery Charging
High Side DC/DC Converter
High Side Driver for Brushless DC Motor
Power Management in Portable, Battery
Powered Devices
Pin configuration
Top View
8765
KKDD
General Description
SSC8K21GN3 combines a P-Channel enhancement
mode power MOSFET which is produced with high cell
density and DMOS trench technology and a low forward
voltage schottky diode. the tiny and thin outline saves
PCB consumption.
Package Information
KD
AASG
12 3 4
SSC-1V0
PackageDFN3x2
http://www.afsemi.com
1/5
Analog Future




AFSEMI

SSC8K21GN3 Datasheet Preview

SSC8K21GN3 Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

SSC8K21GN3
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS -20
VGS ±8
V
Drain Current (Note 1)
Continuous
Pulsed
-2
ID A
-8
Schottky Reverse Voltage
VR 20
V
Schottky Continuous Forward Current
Power Dissipation Derating above TA = 25°C (Note 1)
IF 1 A
Pd 1.2 W
Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Note:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 2)
Symbol
Test Conditions
P-channel Enhancement Mode MOSFET
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDSS
VDS = -20V, VGS = 0V
Gate-Body Leakage
IGSS VGS = ±8V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = -250uA
Static Drain-Source On-Resistance
RDS (ON)
ID = -0.5A,VGS = -4.50V
ID = -0.5A,VGS = -2.50V
ID = -0.5A,VGS = -1.80V
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -6V, RL = 6R, ΙD = −1Α,
VGEN = -4.5V, RG = 6R
Turn-Off Fall Time
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -6V, VGS = 0V,
f = 1.0 MHz
Schottky Diode
Breakdown Voltage
VR IR=300uA
Forward Voltage Drop
VF IF=0.5A
Maximum reverse leakage current
IR
VR=20V
Note : 2. Short duration test pulse used to minimize self-heating effect.
Min Typ Max Unit
-20 -- --
-- -- -1
-- -- ±100
-0.5 -- -1.2
-- 130 190
-- 170 250
-- 230 500
-- 13 --
-- 18 --
-- 42 --
-- 120 --
-- 376 --
-- 187 --
-- 78 --
V
uA
nA
V
mR
ns
pF
20 -- --
-- 0.41 0.48
-- 15 200
V
V
uA
SSC-1V0
http://www.afsemi.com
2/5
Analog Future


Part Number SSC8K21GN3
Description P-Channel Enhancement Mode MOSFET
Maker AFSEMI
Total Page 5 Pages
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