SSC8K23GN2 - P-Channel Enhancement Mode MOSFET

General Description

forward voltage schottky diode.

outline saves PCB consumption.

Package Information ackage:DFN2x

Key Features

s P-MOSFET VDS VGS RDSon TYP 135mR@-4V5 ID.

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SSC8K23GN2 p-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8K23GN2
Manufacturer	AFSEMI
File Size	237.66 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	SSC8K23GN2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8K23GN2 P-Channel Enhancement Mode MOSFET with Schottky Diode  Features P-MOSFET VDS VGS RDSon TYP 135mR@-4V5 ID  Applications  Bidirectional blocking switch;  DC-DC conversion applications;  Li-battery charging; -20V ±8V Schottky 180mR@-2V5 240mR@-1V8 -2A  Pin configuration Top View VR IR VF 20V 35uA 410mV@0.5A  General Description IO 1A 654 KG S SSC8K23GN2 combines a P-Channel enhancement mode power MOSFET which is produced with high KD cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption. A NC D 123  Package Information ackage:DFN2x2 Unit:mm Dim Min Typ Max A 1.95 2 2.08 B 1.95 2 2.08 C 0.5 0.6 0.7 D 0.9 1 1.1 E 0.545 0.575 0.605 F - 0.13 - G 0.2 0.25 0.3 H 0.