SSC8LA0GS1 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch Industrial and Motor Drive applications DC/DC conversion and AC/DC Converters Pin Configu

Key Features

s.
VDS 100V VGS ±20V RDSon TYP 9.5mR@10V 13.5mR@4V5 ID 14A.
General.

📥 Download Datasheet

SSC8LA0GS1 n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8LA0GS1
Manufacturer	AFSEMI
File Size	550.64 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8LA0GS1 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SSC8033GS3	P-Channel Enhancement Mode MOSFET	SPIRIT-SEMI
SSC8035GS6	P-Channel MOSFET	VBsemi
SSC-AM101	CHIP LED DEVICE	Seoul Semiconductor
SSC-AWT722	TOP LED DEVICE	Seoul Semiconductor
SSC-CMX2	Clip Addressable Output Module	Firesense

Other Datasheets by AFSEMI

Part Number	Description
SSC8LA0GT8	N-Channel Enhancement Mode MOSFET
SSC8013GS6	P-Channel Enhancement Mode MOSFET
SSC8013GSB	P-Channel Enhancement Mode MOSFET
SSC8015GS6	P-Channel Enhancement Mode MOSFET
SSC8019GN2	P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SSC8LA0GS1 N-Channel Enhancement Mode MOSFET  Features  VDS 100V VGS ±20V RDSon TYP 9.5mR@10V 13.5mR@4V5 ID 14A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Industrial and Motor Drive applications  DC/DC conversion and AC/DC Converters Pin Configuration Top View  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.