Datasheet4U Logo Datasheet4U.com

SSC8P20AN2 - N-Channel Enhancement Mode MOSFET

General Description

SSC8P20AN2 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density and a Media Power PNP Transistor .

The tiny and thin outline saves PCB consumption.

Package Information Top View SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8P20AN2 Absolu

Key Features

  • s PNP Transistor VCE VBE -40V -6V.

📥 Download Datasheet

Datasheet Details

Part number SSC8P20AN2
Manufacturer AFSEMI
File Size 653.08 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8P20AN2 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSC8033GS3 P-Channel Enhancement Mode MOSFET SPIRIT-SEMI
SSC8035GS6 P-Channel MOSFET VBsemi
SSC-AM101 CHIP LED DEVICE Seoul Semiconductor
SSC-AWT722 TOP LED DEVICE Seoul Semiconductor
SSC-CMX2 Clip Addressable Output Module Firesense

Other Datasheets by AFSEMI

Part Number Description
SSC8P22AN3 N-Channel Enhancement Mode MOSFET
SSC8P22CN2 N-Channel Enhancement Mode MOSFET
SSC8PN0GN2 High Frequency High Gain PNP Power BJT
SSC8013GS6 P-Channel Enhancement Mode MOSFET
SSC8013GSB P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSC8P20AN2 N-Channel Enhancement Mode MOSFET with PNP Transistor  Features PNP Transistor VCE VBE -40V -6V VCESATMAX -500mV IC -1.0A  Applications  Li Battery Charging  Pin configuration  General Description SSC8P20AN2 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density and a Media Power PNP Transistor . The tiny and thin outline saves PCB consumption.  Package Information Top View SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8P20AN2  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Unit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±8 V Drain Current (Note 1) Continuous 0.