AGMH606C mosfet equivalent, mosfet.
* Advance high cell density Trench technology
TO-220 Pin Configuration
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
*.
BVDSS
RDSON
ID
60V
5.3mΩ
80A
* Features
* Advance high cell density Trench technology
TO-220 Pin Config.
The AGMH606C combines advanced trench
Product Summary
MOSFET technology with a low resistance package
to provide extremely low RDS(ON) .
This device is ideal for load switch and battery protection applications.
BVDSS
RDSON
ID
60V
5.3mΩ
80A
.
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