BVDSS RDSON ID 60V 6.2mΩ 66A
* Advance high cell density Trench technology TO-263 Pin Configuration
* Low RDS(ON) to minimize conductive loss
* Low .

* Features BVDSS RDSON ID 60V 6.2mΩ 66A
* Advance high cell density Trench technology TO-263 Pin Config.

The AGMH6080H combines advanced trenchMOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
* Features BVDSS RDSON ID 60V.

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