AGMH70N90H datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

65V 4.3mΩ 91A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss TO-263 Pin Configuration
* Low Gate Charge for fa.

Application

BVDSS RDSON ID
* Features 65V 4.3mΩ 91A
* Advance high cell density Trench technology
* Low RDS(ON.

Description

The AGMH70N90H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. BVDSS RDSON ID
* Features .

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