AP100N03BD Datasheet, MOSFET, APM

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AP100N03BD Features and benefits

VDS = 30V ID =100A RDS(ON) < 4.5mΩ @ VGS=10V（Type：3.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Informat.

AP100N03BD Application

, should be limited by total power dissipation. Max. Unit --- V 4.5 mΩ 6.5 2.5 V --- mV/℃ 1 uA 5 ±100 nA --- .

AP100N03BD Description

AP100N03BD 30V N-Channel Enhancement Mode MOSFET The AP100N03BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection o.

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