VDS = 40V ID =120A
RDS(ON) < 3.8mΩ @ VGS=10V (Type:2.8mΩ)
Application
Battery protection
Load switch Uninterruptible power supply
Package Marking and Ordering Infor.
, should be limited by total power dissipation.
2
AP120N04BD REV1.0
Typical Characteristics
AP120N04BD
40V N-Chann.
AP120N04BD
40V N-Channel Enhancement Mode MOSFET
The AP120N04BD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protectio.
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