VDS = 30V ID =200A RDS(ON) < 1.0mΩ @ VGS=10V(Type:0.8mΩ)
Application
Buck Boost
Package Marking and Ordering Information
Product ID
Pack
Marking
AP200N03NF
PDFN5*.
, should be limited by total power dissipation.
2
AP200N03NF REV1.0
Typical Characteristics
AP200N03NF
30V N-Chann.
AP200N03NF
30V N-Channel Enhancement Mode MOSFET
The AP200N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protectio.
Image gallery
TAGS