AP25G03GD mosfet equivalent, 30v n+p-channel enhancement mode mosfet.
VDS = 30V ID =25A RDS(ON) < 22mΩ @ VGS=10V (Type:15mΩ) VDS = -30V ID =-24A
Only
RDS(ON) <32mΩ @ VGS=-10V (Type:25mΩ) Application
Use
Boost driver Brushless motor
ti.
, should be limited by total power dissipation.
For
2
AP20G03GD RVE1.0
sales.Mr.wang13826508770 www.sztssd.com
AP.
The AP25G03GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Feat.
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TAGS
+P-Channel
Manufacturer
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