AP2N7002BI Datasheet, MOSFET, APM

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AP2N7002BI Features and benefits

VDS=60V ID =0.35A RDS(ON) < 2200mΩ @ VGS=10V （Type：1700mΩ） ESD Rating：HBM≥2000V Application Load switch Uninterruptible power supply Package Marking and Ordering Info.

AP2N7002BI Application

, should be limited by total power dissipation. 2 AP2N7002BI REV1.0 Typical Characteristics AP2N7002BI 60V N-Chann.

AP2N7002BI Description

AP2N7002BI 60V N-Channel Enhancement Mode MOSFET The AP2N7002BI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection o.

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