VDS =20V ID =0.9A
AP3134AI
20V N-Channel Enhancement Mode MOSFET
RDS(ON) < 250mΩ @ VGS=4.5V （Type：135mΩ）
ESD=2KV HBM
Application
Battery protection
Load switch Unin.
, should be limited by total power dissipation.
2
AP3134AI REV1.0
Typical Characteristics
AP3134AI
20V N-Channel E.
The AP3134AL uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VD.
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