VDS = 20V ID =3.3A RDS(ON) < 50mΩ @ VGS=4.5V (Type:42mΩ)
VDS = -20V ID =-2.8A RDS(ON) < 120mΩ @ VGS=-4.5V(Type:95mΩ)
Application
BLDC
Package Marking and Ordering In.
, should be limited by total power dissipation.
Max. --50 65 1.2 1 5
±100 ----------------------3.6 1.2
Unit V mΩ V uA.
AP3HV02LI
20V NP+NP-Channel Enhancement Mode MOSFET
The AP3HV02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection.
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TAGS
+NP-Channel
Manufacturer
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