VDS = 30V ID =50A RDS(ON) <6.0mΩ @ VGS=10V (Type：4.8mΩ)
Only
CISS≈814PF
Application
Use
Buck And Boost Wireless impact Car charging
times
heng Package Marking and O.
, should be limited by total power dissipation.
2
AP50H03NF2 RVE1.0
sales.Mr.wang13826508770 www.sztssd.com
Typica.
AP50H03NF2
30V N+N-Channel Enhancement Mode MOSFET
The AP50H03NF2 uses advanced APM-SGT II technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery pro.
Image gallery
TAGS
+N-Channel
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