VDS = 40V ID =50A
RDS(ON) < 18mΩ @ VGS=10V （Type：13mΩ）
Application VBUS Wireless impact Mobile phone fast charging
Package Marking and Ordering Information
Product I.
, should be limited by total power dissipation.
2
AP50N04DF REV1.0
Typical Characteristics
AP50N04DF
40V N-Channel.
AP50N04DF
40V N-Channel Enhancement Mode MOSFET
The AP50N04DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
.
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