VDS =40V ID =60A
RDS(ON) < 13mΩ @ VGS=10V (Type:9.5mΩ)
Application VBUS Wireless impact Mobile phone fast charging
Package Marking and Ordering Information
Product I.
, should be limited by total power dissipation.
2
AP60N04D RVE3.9
Typical Characteristics
AP60N04D
40V N-Channel E.
AP60N04D
40V N-Channel Enhancement Mode MOSFET
The AP60N04D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
o.
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