VDS = 900V ID =9A
RDS(ON) < 1000mΩ @ VGS=10V （Type：920mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Inform.
, should be limited by total power dissipation.
2
AP9N90F/P/T RVE1.0
Typical Characteristics
AP9N90FIPIT
900V N-Ch.
The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s.
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