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AT49BV040A - 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description

The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory.

Its 4 megabits of memory is organized as 524,288 words by 8 bits.

Features

  • Single Supply for Read and Write: 2.7 to 3.6V.
  • Fast Read Access Time.
  • 70 ns.
  • Internal Program Control and Timer.
  • Sector Architecture.
  • One 16K Bytes Boot Block with Programming Lockout.
  • Two 8K Bytes Parameter Blocks.
  • Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes).
  • Fast Erase Cycle Time.
  • 7 Seconds.
  • Byte-by-Byte Programming.
  • 30 µs/Byte Typical.
  • Hardware Data Protection.

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Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 70 ns • Internal Program Control and Timer • Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes) • Fast Erase Cycle Time – 7 Seconds • Byte-by-Byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits.
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