Download AT49BV040T Datasheet PDF
AT49BV040T datasheet preview
AT49BV040T page 2
Page 2
AT49BV040T page 3
Page 3

AT49BV040T Key Features

  • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
  • Fast Read Access Time
  • 120 ns
  • Internal Program Control and Timer
  • 16K bytes Boot Block With Lockout
  • Fast Chip Erase Cycle Time
  • 10 seconds
  • Byte-by-Byte Programming
  • 30 µs/Byte Typical
  • Hardware Data Protection

Related Atmel Datasheets

Part Number Description
AT49BV040 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV040A 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001A 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001AN 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

AT49BV040T Description

The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the mercial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA.