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AT49BV040A Key Features

  • Single Supply for Read and Write: 2.7 to 3.6V
  • Fast Read Access Time
  • Internal Program Control and Timer
  • Sector Architecture
  • One 16K Bytes Boot Block with Programming Lockout
  • Two 8K Bytes Parameter Blocks
  • Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes)
  • Fast Erase Cycle Time
  • 7 Seconds
  • Byte-by-Byte Programming

Related Atmel Datasheets

Part Number Description
AT49BV040 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV040T 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001A 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001AN 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

AT49BV040A Description

The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over the mercial temperature range.