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AT49BV040 - 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Download the AT49BV040 datasheet PDF (AT49LV040 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 4-megabit (512k x 8) single 2.7-volt battery-voltage flash memory.

Description

The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range.

Features

  • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV).
  • Fast Read Access Time - 120 ns.
  • Internal Program Control and Timer.
  • 16K bytes Boot Block With Lockout.
  • Fast Chip Erase Cycle Time - 10 seconds.
  • Byte-by-Byte Programming - 30 µs/Byte Typical.
  • Hardware Data Protection.
  • DATA Polling For End Of Program Detection.
  • Low Power Dissipation.
  • 25 mA Active Current.
  • 50 µA CMOS Standby Cur.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT49LV040_ATMELCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ATMEL
  • AT49BV040A - 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV040T - 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001 - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001A - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001AN - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001ANT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001AT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001N - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Full PDF Text Transcription

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Features • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Timer • 16K bytes Boot Block With Lockout • Fast Chip Erase Cycle Time - 10 seconds • Byte-by-Byte Programming - 30 µs/Byte Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles • Small Packaging – 8 x 8 mm CBGA – 8 x 14 mm V-TSOP Description The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each.
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