AT69170E Key Features
- 4Mbits x1 Non Volatile Memory Designed to Store Field Programmable Gate
- Arrays (FPGAs) Configurations In-System Programming (ISP) via Two-Wire Bus Simple Interface to SRAM FPGAs patible with A
- Active read: 18mW max
- Standby mode: 3.6mW max High-reliability
- Endurance: 50,000 Write Cycles (page mode)
- Data Retention: 10 Years 4Mbits On-chip Flash Array
- 512 bytes Page Write No Single Event Latch-up below a LET Threshold of 80MeV/mg/cm2 Tested up to a Total Dose of 60KRads
- Voltage: 3V to 3.6V
- Temperature: -55 to +125° C Quality Grades
- QML-Q or V