THN6501F transistor equivalent, sige npn transistor.
o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Gain MAG = 11.5 dB at f = 1 GHz, VCE = 10 V, IC = 20 mA
o High Transition Frequency fT = 7 GHz at.
Base
Collector Emitter
□ Absolute Maximum Ratings
Symbol
Parameter
VCBO VCEO VEBO IC PT TSTG TJ
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current (DC) Total Power Dissi.
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