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THN6201 - SiGe NPN Transistor

Datasheet Summary

Description

Base Emitter Collector Available Package Unit : mm Product Package Dimension THN6201S SOT-23 2

Features

  • s o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA MAG = 13 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA o High Transition Frequency fT = 12 GHz at VCE = 3 V, IC = 15 mA.
  • hFE Classification Marking AC1 hFE Value 125 to 300 AC2 80 to 160.
  • Absolute Maximum Ratings Symbol Parameter VCBO Collector to Base Breakdown Voltage VCEO Collector to Emitter.

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Datasheet Details

Part number THN6201
Manufacturer AUK
File Size 248.06 KB
Description SiGe NPN Transistor
Datasheet download datasheet THN6201 Datasheet
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Semiconductor □ Applications LNA and wide band amplifier up to GHz range THN6201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.
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