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THN6501F Datasheet Sige NPN Transistor

Manufacturer: AUK (Kodenshi AUK Group)

Overview: Semiconductor □ Application LNA and wide band amplifier up to GHz.

General Description

Base Collector Emitter □ Absolute Maximum Ratings Symbol Parameter VCBO VCEO VEBO IC PT TSTG TJ Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ratings 25 12 2.5 100 400 -65 ~ 150 150 Unit V V V mA mW ℃ ℃ 1 THN6501F □ Electrical Characteristics ( TA = 25 ℃ ) Symbol Parameter Test Condition Value Unit Min.

Typ.

Max.

Key Features

  • s o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Gain MAG = 11.5 dB at f = 1 GHz, VCE = 10 V, IC = 20 mA o High Transition Frequency fT = 7 GHz at f = 1 GHz, VCE = 10 V, IC = 30 mA THN6501F SiGe NPN Transistor SOT-89 Unit in mm 4.
  • hFE Classification Marking AB1 hFE 125 to 300 AB2 80 to 160 Pin Configuration Pin No Symbol 1B 2, 4 C 3E.

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