THN6701B Key Features
- High power gain GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz
- High power POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz
| Part Number | Description |
|---|---|
| THN6702F | SiGe NPN Transistor |
| THN6201 | SiGe NPN Transistor |
| THN6301 | SiGe NPN Transistor |
| THN6501 | SiGe NPN Transistor |
| THN6501F | SiGe NPN Transistor |