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Advanced Power Electronics

AP11S60I-HF Datasheet Preview

AP11S60I-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP11S60I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
D
S
Description
AP11S60 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. It
provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching design and cost-effectiveness.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink
BVDSS
RDS(ON)
ID
600V
0.37Ω
11A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+20
11
6.9
22
36.7
1.92
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.4
65
Units
/W
/W
1
201207171




Advanced Power Electronics

AP11S60I-HF Datasheet Preview

AP11S60I-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP11S60I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VGS=0V, ID=250uA
VGS=10V, ID=3.7A
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=480V, VGS=0V
VGS=+20V, VDS=0V
ID=5A
VDS=480V
VGS=10V
VDD=300V
ID=5A
RG=3.3
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Test Conditions
IS=5A, VGS=0V
IS=5A, VGS=0V
dI/dt=100A/µs
600 -
-V
- - 0.37
2 - 4V
- 10 -
S
- - 25 uA
- - +100 nA
- 38 61 nC
- 6.5 - nC
- 19 - nC
- 11 - ns
- 13 - ns
- 49 - ns
- 17 - ns
- 1065 1704 pF
- 625 - pF
- 5 - pF
- 4.6 9.2
Min. Typ. Max. Units
- 0.95 -
V
- 260 -
ns
- 3.8 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



Part Number AP11S60I-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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AP11S60I-HF Datasheet PDF





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