Datasheet4U Logo Datasheet4U.com

AP2864I-A-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Full PDF Text Transcription for AP2864I-A-HF-3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AP2864I-A-HF-3. For precise diagrams, and layout, please refer to the original PDF.

Advanced Power Electronics Corp. AP2864I-A-HF-3 N-channel Enhancement-mode Power MOSFET Low On-resistance Simple Drive Requirement Fast Switching Performance RoHS-complia...

View more extracted text
tance Simple Drive Requirement Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 650V 1.1Ω 7A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2864I-A-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required. This device is well suited for use in high voltage applications such as universal 90~265VAC off-line AC/DC converters.

More Datasheets from Advanced Power Electronics Corp

Part Number Description
AP2864I-A-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP28G40GEH N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G40GEJ N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G40GEM-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G40GEO N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G45EM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G45GEM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G45GEO-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP20G45EH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20G45EJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET