Datasheet4U Logo Datasheet4U.com

AP28G40GEM-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

📥 Download Datasheet

Datasheet preview – AP28G40GEM-HF

Datasheet Details

Part number AP28G40GEM-HF
Manufacturer Advanced Power Electronics
File Size 63.86 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AP28G40GEM-HF Datasheet
Additional preview pages of the AP28G40GEM-HF datasheet.

📁 Similar Datasheet

  • AP2805 - 500mA High-side Power Distribution Switch (BCD)
  • AP2810 - 1.0A High-side Power Distribution Switch (BCD)
  • AP2815 - 1.5A High-side Power Distribution Switch (BCD)
  • AP2820 - High-side Power Distribution Switch (BCD)
  • AP2820 - 2.0A HIGH-SIDE POWER DISTRIBUTION SWITCH (DIODES)
  • AP2821 - High-side Power Distribution Switch (BCD)
  • AP2822 - 0.5A to 2.0A High-side Power Distribution Switches (BCD)
  • AP2822 - 0.5A to 2.0A HIGH-SIDE POWER DISTRIBUTION SWITCHES (DIODES)
  • AP2851GO - N- and P-Channel MOSFET (VBsemi)
  • AP28N50F - 500V N-Channel Enhancement Mode MOSFET (APM)
Other Datasheets by Advanced Power Electronics
  • AP28G40GEH - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP28G40GEJ - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP28G40GEO - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP28G45EM - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP28G45GEM - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP28G45GEO-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP2864I-A-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP2864I-A-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
Advanced Power Electronics Corp. AP28G40GEM-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C SO-8 VCE ICP G E EE G 400V 150A C E Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VCE VGEP ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range . 400 +6 150 1 -55 to 150 150 V V A W oC oC Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max.
Published: |