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AP28G40GEO - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Datasheet Details

Part number AP28G40GEO
Manufacturer Advanced Power Electronics
File Size 90.92 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AP28G40GEO Datasheet
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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP28G40GEO RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications C C C C TSSOP-8 G E E E VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGEP ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 2.5V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 400 ±6 150 1 -55 to 150 150 Units V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ.
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