AP28G40GEO Description
Advanced Power Electronics Corp. ±10 10 9 1.2 130 8240 125 Units uA uA V V nC nC nC ns ns µs µs pF pF pF ℃/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
- Part: AP28G40GEO
- Manufacturer: Advanced Power Electronics Corp
- Size: 90.92 KB
Related Advanced Power Electronics Corp Datasheets
| Part Number | Description |
|---|---|
| AP28G40GEH | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G40GEJ | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G40GEM-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G45EM | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G45GEM | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |