AP28G40GEJ datasheet by Advanced Power Electronics Corp.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | AP28G40GEJ |
|---|---|
| Datasheet | AP28G40GEJ AP28G40GEH Datasheet (PDF) |
| File Size | 135.90 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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Advanced Power Electronics Corp. E Units V V A W oC oC @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typical Output Characteristics IC , Collector Current (A) 100 T C =150 o C 80 60 5.0 V.
View all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP28G40GEH | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G40GEM-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G40GEO | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G45EM | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G45GEM | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G45GEO-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP2864I-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2864I-A-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP20G45EH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP20G45EJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
