AP28G40GEJ Description
Advanced Power Electronics Corp. E Units V V A W oC oC @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typical Output Characteristics IC , Collector Current (A) 100 T C =150 o C 80 60 5.0 V.
- Part: AP28G40GEJ
- Manufacturer: Advanced Power Electronics Corp
- Size: 135.90 KB
Related Advanced Power Electronics Corp Datasheets
| Part Number | Description |
|---|---|
| AP28G40GEH | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G40GEM-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G40GEO | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G45EM | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G45GEM | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |