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AP28G40GEH - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Datasheet Details

Part number AP28G40GEH
Manufacturer Advanced Power Electronics
File Size 135.90 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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Full PDF Text Transcription

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Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free AP28G40GEH/J Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR G CE TO-252(H) VCE ICP G 400V 150A C G C E TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage ±6 ICP Pulsed Collector Current, VGE @ 2.5V 150 PD@TA=25℃ Maximum Power Dissipation 1.1 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range 150 . E Units V V A W oC oC Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ.
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