AP28G45EM Description
AP28G45EM Advanced Power Electronics Corp. 1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min.
AP28G45EM is N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR manufactured by Advanced Power Electronics Corp.
| Part Number | Description |
|---|---|
| AP28G45GEM | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G45GEO-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G40GEH | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G40GEJ | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP28G40GEM-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
AP28G45EM Advanced Power Electronics Corp. 1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min.