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AP28G45GEO-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Datasheet Details

Part number AP28G45GEO-HF
Manufacturer Advanced Power Electronics
File Size 89.42 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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Full PDF Text Transcription

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Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications AP28G45GEO-HF RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR E E E G TSSOP-8 C C C C VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGE ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 2.5V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 400 ±6 150 1 -55 to 150 150 Units V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ.
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