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BFR96 Datasheet RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacturer: Advanced Power Technology

Datasheet Details

Part number BFR96
Manufacturer Advanced Power Technology
File Size 153.83 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet download datasheet BFR96 Datasheet

General Description

: Designed primarily for use in high-gain, low noise, small-signal amplifiers.

Also used in applications requiring fast switching times.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.0 100 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 100ºC Derate above 100ºC 500 10 mWatts mW/ ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Overview

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal.

Key Features

  • High Current-Gain.
  • Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA Low Noise Figure.
  • NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain.
  • Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T (STYLE #2).