MS1001
Features
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- 30 MHz 12.5 VOLTS IMD = -32 d Bc INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 75 WATTS GP = 13d B MINIMUM MON EMITTER CONFIGURATION
DESCRIPTION
:
The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF munications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VEBO IC PD Tj T STG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Total Dissipation Junction Temperature Storage Temperature
Value
36 18 4.0 20 270 200 -65 to +150
Unit
V V V A W
ºC ºC
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 0.65 ° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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