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MS1001 - RF & MICROWAVE TRANSISTORS

Description

The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications.

Diffused emitter resistors provide infinite VSWR capability under rated operating conditions.

Features

  • 30 MHz 12.5 VOLTS IMD = -32 dBc.

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Datasheet preview – MS1001

Datasheet Details

Part number MS1001
Manufacturer Advanced Power Technology
File Size 136.92 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1001 Datasheet
Additional preview pages of the MS1001 datasheet.

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Full PDF Text Transcription

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1001 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS www.datasheet4u.com Features • • • • • • • 30 MHz 12.5 VOLTS IMD = -32 dBc INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 75 WATTS GP = 13dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Total Dissipation Junction Temperature Storage Temperature Value 36 18 4.
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