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MS1001 Datasheet

Manufacturer: Advanced Power Technology
MS1001 datasheet preview

Datasheet Details

Part number MS1001
Datasheet MS1001_AdvancedPowerTechnology.pdf
File Size 136.92 KB
Manufacturer Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS
MS1001 page 2 MS1001 page 3

MS1001 Overview

The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF munications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Total Dissipation Junction Temperature Storage Temperature Value 36 18 4.0 20...

MS1001 Key Features

  • 30 MHz 12.5 VOLTS IMD = -32 dBc INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 75 WATTS GP = 13dB MINIMUM MON EMITTE
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