MS1007 Description
The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB munications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage...
MS1007 Key Features
- 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM MON EMITTER CONFIGURATION