Datasheet Details
| Part number | MS1007 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 164.94 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MS1007_AdvancedPowerTechnology.pdf |
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Overview: 140 MERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1007 ..
| Part number | MS1007 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 164.94 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MS1007_AdvancedPowerTechnology.pdf |
|
|
|
: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB munications.
This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 110 55 4.0 10 233 +200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.75 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at .ADVANCEDPOWER.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MS1007SH | Quasi-Resonant Power Supply | Shindengen |
| Part Number | Description |
|---|---|
| MS1000 | RF & MICROWAVE TRANSISTORS |
| MS1001 | RF & MICROWAVE TRANSISTORS |
| MS1003 | RF & MICROWAVE TRANSISTORS |
| MS1006 | RF AND MICROWAVE TRANSISTORS |
| MS1008 | RF & MICROWAVE TRANSISTORS |
| MS1011 | RF AND MICROWAVE TRANSISTORS |
| MS1051 | RF & MICROWAVE TRANSISTORS |
| MS1076 | RF & MICROWAVE TRANSISTORS |
| MS1079 | RF & MICROWAVE TRANSISTORS |
| MS1226 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |