Advanced Power Technology MS1007
The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.| Part No. | MS1007 |
|---|---|
| Datasheet | MS1007 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION
:ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 110 55 4.0 10 233 +200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.75 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1007 STATICELECTRICAL SPECIFICATIONS
(Tcase = 25 ° C) Symbol BVCBO BVCES BVCEO BVEBO ICEO ICES hFE IC = 100mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 60V VCE = 6V Test Conditions IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0 mA IE = 0mA IC = 1.4A Min.
