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MS1000 - RF & MICROWAVE TRANSISTORS

General Description

The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications.

Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.

Key Features

  • 30 MHz 28 VOLTS IMD = -30 dB GOLD.

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Datasheet Details

Part number MS1000
Manufacturer Advanced Power Technology
File Size 117.02 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1000 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1000 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS www.datasheet4u.com Features • • • • • • • 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36 4.