Advanced Power Technology MS1000
The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications.| Part No. | MS1000 |
|---|---|
| Datasheet | MS1000 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION
: Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36 4.0 20 270 200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.65 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1000ELECTRICAL SPECIFICATIONS
(Tcase = 25 ° C) STATIC Symbol BVCBO BVCES BVCEO BVEBO ICES hFE IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VCE = 5 V Test Conditions IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 5 A Min.
