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MS1003 - RF & MICROWAVE TRANSISTORS

General Description

The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications.

Diffused emitter resistors provide high VSWR capability under rated operating conditions.

Internal impedance matching ensures optimum power gain and efficiency over the 136-175 MHz band.

Key Features

  • 175 MHz 12.5 VOLTS POUT = 100 WATTS GP = 6.0 dB.

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Datasheet Details

Part number MS1003
Manufacturer Advanced Power Technology
File Size 114.05 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1003 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1003 www.datasheet4u.com RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 100 WATTS GP = 6.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and efficiency over the 136-175 MHz band.