Datasheet Details
| Part number | MS1003 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 114.05 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet |
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The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications.
Diffused emitter resistors provide high VSWR capability under rated operating conditions.
Internal impedance matching ensures optimum power gain and efficiency over the 136-175 MHz band.
| Part number | MS1003 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 114.05 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet |
|
|
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| Part Number | Description | Manufacturer |
|---|---|---|
| MS1003 | 10 AMP SCHOTTKY BARRIER RECTIFIERS | Microsemi Corporation |
| MS1003SH | Quasi-Resonant Power Supply | Shindengen |
| MS1000 | Single axis analog accelerometer | SAFRAN |
| MS1000L | Single axis analog accelerometer | SAFRAN |
| MS1000T | Single axis analog accelerometer | SAFRAN |
| Part Number | Description |
|---|---|
| MS1000 | RF & MICROWAVE TRANSISTORS |
| MS1001 | RF & MICROWAVE TRANSISTORS |
| MS1006 | RF AND MICROWAVE TRANSISTORS |
| MS1007 | RF & MICROWAVE TRANSISTORS |
| MS1008 | RF & MICROWAVE TRANSISTORS |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.