Advanced Power Technology MS1001
The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications.| Part No. | MS1001 |
|---|---|
| Datasheet | MS1001 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● 30 MHz 12.5 VOLTS IMD = -32 dBc INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 75 WATTS GP = 13dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION
: Diffused emitter resistors provide infinite VSWR capability under rated operating conditions.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Total Dissipation Junction Temperature Storage Temperature Value 36 18 4.0 20 270 200 -65 to +150 Unit V V V A W ºC ºC Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.65 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1001 STATICELECTRICAL SPECIFICATIONS
(Tcase = 25 ° C) Symbol BVCBO BVCES BVCEO BVEBO ICES hFE IC = 50 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5 V Test Conditions IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 5 A Min.
