Datasheet4U Logo Datasheet4U.com

MS1001 - RF & MICROWAVE TRANSISTORS

General Description

The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications.

Diffused emitter resistors provide infinite VSWR capability under rated operating conditions.

Key Features

  • 30 MHz 12.5 VOLTS IMD = -32 dBc.

📥 Download Datasheet

Datasheet Details

Part number MS1001
Manufacturer Advanced Power Technology
File Size 136.92 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1001 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1001 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS www.datasheet4u.com Features • • • • • • • 30 MHz 12.5 VOLTS IMD = -32 dBc INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 75 WATTS GP = 13dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Total Dissipation Junction Temperature Storage Temperature Value 36 18 4.